Explore the colorful future metropolis of Neo-San Francisco, meeting a huge cast of fascinating characters and solving a far-reaching mystery. Hitachi Global Storage Technologies Netherlands B.V.2064: Read Only Memories merges old-school adventure gaming with modern storytelling to explore some of the social challenges we will face in the near future. Magnetic memory composition and method of manufacture Tracking system for gamma radiation sterilized bags and disposable itemsĬomposition de memoire magnetique et procede de fabrication Method of incorporating magnetic materials in a semiconductor manufacturing process Method and apparatus for detecting substances of interestĬapteurs a effet hall planaire geant dans des semi-conducteurs a diluatĮxtraordinary hall effect sensors and arrays The Regents Of The University Of California Memoire ferromagnetique remanente comportant un circuit de detection partage avec son circuit de modification d'etat Method and apparatus for reading data from a ferromagnetic memory cell Macrocellule de circuit logique a reseau programmable utilisant des cellules de memoire ferromagnetiques Registre a cellule memoire ferromagnetique Programmable array logic circuit employing non-volatile ferromagnetic memory cells (Micromem Technologies, Inc.)ĭual conductor inductive sensor for a non-volatile random access ferromagnetic memory Mémoire RAM ferromagnétique à effet Hall et procédé de sa fabricationįamilies Citing this family (26) * Cited by examiner, † Cited by third party Publication number Hall effect ferromagnetic random access memory device and its method of manufactureįamily ID=22814730 Family Applications (1) Application Number Priority Applications (2) Application Number H01L43/00- Devices using galvano-magnetic or similar magnetic effects Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereofĮP99310406A Mémoire RAM ferromagnétique à effet Hall et procédé de sa fabrication.H01L- SEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR.G11C11/18- Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor using Hall-effect devices.G11C11/00- Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor.238000004519 manufacturing process Methods 0.000 title abstract 2.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority to US09/218,344 priority Critical patent/US6140139A/en Priority to US218344 priority Application filed by Estancia Ltd, Pageant Technologies Inc filed Critical Estancia Ltd Publication of EP1028474A2 publication Critical patent/EP1028474A2/fr Publication of EP1028474A3 publication Critical patent/EP1028474A3/fr Status Withdrawn legal-status Critical Current Links Original Assignee Estancia Ltd Pageant Technologies Inc Priority date (The priority date is an assumption and is not a legal conclusion.
Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) ( fr Inventor Richard Lienau Laurence Sadwick Current Assignee (The listed assignees may be inaccurate.
Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Withdrawn Application number EP99310406A Other languages German ( de)
MEMOIRES RAM PDF
Google Patents Mémoire RAM ferromagnétique à effet Hall et procédé de sa fabricationĭownload PDF Info Publication number EP1028474A3 EP1028474A3 EP99310406A EP99310406A EP1028474A3 EP 1028474 A3 EP1028474 A3 EP 1028474A3 EP 99310406 A EP99310406 A EP 99310406A EP 99310406 A EP99310406 A EP 99310406A EP 1028474 A3 EP1028474 A3 EP 1028474A3 Authority EP European Patent Office Prior art keywords hall effect random access access memory ferromagnetic cell Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents EP1028474A3 - Mémoire RAM ferromagnétique à effet Hall et procédé de sa fabrication EP1028474A3 - Mémoire RAM ferromagnétique à effet Hall et procédé de sa fabrication
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